? 2011 ixys corporation, all rights reserved features z high blocking voltage z international standard packages z low conduction losses z high current handling capability z mos gate turn-on - drive simplicity advantages z easy to mount z space savings z high power density applications z uninterruptible power supplies (ups) z switch-mode and resonant-mode power supplies z capacitor discharge circuits z laser generators ds100158a(11/11) high voltage, high gain bimosfet tm monolithic bipolar mos transistor ixbk55n300 IXBX55N300 v ces = 3000v i c110 = 55a v ce(sat) 3.2v symbol test conditions maximum ratings v ces t j = 25c to 150c 3000 v v cgr t j = 25c to 150c, r ge = 1m 3000 v v ges continuous 25 v v gem transient 35 v i c25 t c = 25c ( chip capability ) 130 a i lrms t c = 25c ( lead rms limit ) 120 a i c110 t c = 110c 55 a i cm t c = 25c, 1ms 600 a ssoa v ge = 15v, t vj = 125c, r g = 2 i cm = 110 a (rbsoa) clamped inductive load @0.8 ? v ces t sc v ge = 15v, t j = 125c, (scsoa) r g = 10 , v ce = 1250v, non-repetitive 10 s p c t c = 25c 625 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l maximum lead temperature for soldering 300 c t sold 1.6 mm (0.062 in.) from case for 10 260 c m d mounting torque (to-264 ) 1.13/10 nm/lb.in. f c mounting force (plus247 ) 20..120/4.5..27 n/lb. weight to-264 10 g plus247 6 g symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv ces i c = 1ma, v ge = 0v 3000 v v ge(th) i c = 4ma, v ce = v ge 3.0 5.0 v i ces v ce = v ces , v ge = 0v 50 a t j = 125 c 3 ma i ges v ce = 0v, v ge = 25v 200 na v ce(sat) i c = 55a, v ge = 15v, note 1 2.7 3.2 v t j = 125 c 3.3 v g = gate e = emitter c = collector tab = collector to-264 (ixbk) e g c plus247 (ixbx) g tab tab e c g
ixbk55n300 IXBX55N300 ixys reserves the right to change limits, test conditions, and dimensions. ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or moreof the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 to-264 outline symbol test conditions characteristic values (t j = 25c unless otherwise specified) min. typ. max. g fs i c = 55a, v ce = 10v, note 1 32 50 s c ies 7300 pf c oes v ce = 25v, v ge = 0v, f = 1mhz 275 pf c res 83 pf q g 335 nc q ge i c = 55a, v ge = 15v, v ce = 1000v 47 nc q gc 130 nc t d(on) 54 ns t r 307 ns t d(off) 230 ns t f 268 ns t d(on) 52 ns t r 585 ns t d(off) 215 ns t f 260 ns r thjc 0.20 c/w r thcs 0.15 c/w note 1: pulse test, t 300 s, duty cycle, d 2%. additional provisions for lead-to-lead isolation are required at v ce >1200v. resistive switching times, t j = 125c i c = 110a, v ge = 15v v ce = 1250v, r g = 2 resistive switching times, t j = 25c i c = 110a, v ge = 15v v ce = 1250v, r g = 2 reverse diode symbol test conditions characteristic values (t j = 25c unless otherwise specified) min. typ. max v f i f = 55a, v ge = 0v, note 1 2.5 v t rr 1.9 s i rm 54 a i f = 28a, v ge = 0v, -di f /dt = 100a/ s v r = 100v, v ge = 0v plus 247 tm outline dim. millimeter inches min. max. min. max. a 4.83 5.21 .190 .205 a 1 2.29 2.54 .090 .100 a 2 1.91 2.16 .075 .085 b 1.14 1.40 .045 .055 b 1 1.91 2.13 .075 .084 b 2 2.92 3.12 .115 .123 c 0.61 0.80 .024 .031 d 20.80 21.34 .819 .840 e 15.75 16.13 .620 .635 e 5.45 bsc .215 bsc l 19.81 20.32 .780 .800 l1 3.81 4.32 .150 .170 q 5.59 6.20 .220 0.244 r 4.32 4.83 .170 .190 1 - gate 2,4 - collector 3 - emitter 1 - gate 2 - collector 3 - emitter
? 2011 ixys corporation, all rights reserved ixbk55n300 IXBX55N300 fig. 1. output characteristics @ t j = 25oc 0 20 40 60 80 100 120 0 0.5 1 1.5 2 2.5 3 3.5 4 v ce - volts i c - amperes v ge = 25v 20v 15v 10v 5v fig. 2. extended output characteristics @ t j = 25oc 0 50 100 150 200 250 300 012345678 v ce - volts i c - amperes v ge = 25v 20v 15v 10v 5v fig. 3. output characteristics @ t j = 125oc 0 20 40 60 80 100 120 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 v ce - volts i c - amperes v ge = 25v 20v 15v 10v 5v fig. 4. dependence of v ce(sat) on junction temperature 0.6 0.8 1.0 1.2 1.4 1.6 1.8 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade v ce(sat) - normalized v ge = 15v i c = 110a i c = 55a i c = 27.5a fig. 5. collector-to-emitter voltage vs. gate-to-emitter voltage 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 5 6 7 8 9 10 11 12 13 14 15 v ge - volts v ce - volts i c = 110a t j = 25oc 27.5a 55a fig. 6. input admittance 0 20 40 60 80 100 120 140 160 180 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 v ge - volts i c - amperes t j = 125oc 25oc - 40oc
ixbk55n300 IXBX55N300 ixys reserves the right to change limits, test conditions, and dimensions. fig. 7. transconductance 0 10 20 30 40 50 60 70 80 90 100 0 20 40 60 80 100 120 140 160 180 200 i c - amperes g f s - siemens t j = - 40oc 25oc 125oc fig. 9. gate charge 0 2 4 6 8 10 12 14 16 0 50 100 150 200 250 300 350 q g - nanocoulombs v ge - volts v ce = 1000v i c = 55a i g = 10ma fig. 11. reverse-bias safe operating area 0 20 40 60 80 100 120 200 600 1000 1400 1800 2200 2600 3000 v ce - volts i c - amperes t j = 125oc r g = 2 ? dv / dt < 10v / ns fig. 10. capacitance 10 100 1,000 10,000 100,000 0 5 10 15 20 25 30 35 40 v ce - volts capacitance - picofarads f = 1 mhz c ies c oes c res fig. 12. maximum transient thermal impedance 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w fig. 8. forward voltage drop of intrinsic diode 0 20 40 60 80 100 120 140 160 180 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 v f - volts i f - amperes t j = 125oc t j = 25oc
? 2011 ixys corporation, all rights reserved ixbk55n300 IXBX55N300 fig. 14. resistive turn-on rise time vs. collector current 200 300 400 500 600 700 40 60 80 100 120 140 160 180 200 220 i c - amperes t r - nanoseconds t j = 125oc t j = 25oc r g = 2 ? , v ge = 15v v ce = 1250v fig. 15. resistive turn-on switching times vs. gate resistance 560 580 600 620 640 660 680 700 720 2 3 4 5 6 7 8 9 10 11 12 13 14 15 r g - ohms t r - nanoseconds 40 50 60 70 80 90 100 110 120 t d ( on ) - nanoseconds t r t d(on) - - - - t j = 125oc, v ge = 15v v ce = 1250v i c = 220a i c = 110a fig. 16. resistive turn-off switching times vs. junction temperature 230 240 250 260 270 280 290 300 310 320 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t f - nanoseconds 120 140 160 180 200 220 240 260 280 300 t d ( off ) - nanoseconds t f t d(off) - - - - r g = 2 ? , v ge = 15v v ce = 1250v i c = 220a i c = 110a fig. 17. resistive turn-off switching times vs. collector current 200 220 240 260 280 300 320 340 360 380 40 60 80 100 120 140 160 180 200 220 i c - amperes t f - nanoseconds 140 160 180 200 220 240 260 280 300 320 t d ( off ) - nanoseconds t f t d(off) - - - - r g = 2 ? , v ge = 15v v ce = 1250v t j = 125oc, 25oc fig. 13. resistive turn-on rise time vs. junction temperature 200 300 400 500 600 700 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t r - nanoseconds r g = 2 ? , v ge = 15v v ce = 1250v i c = 220a i c = 110a fig. 18. resistive turn-off switching times vs. gate resistance 220 240 260 280 300 320 340 360 23456789101112131415 r g - ohms t f - nanoseconds 120 200 280 360 440 520 600 680 t d ( off ) - nanoseconds t f t d(off ) - - - - t j = 125oc, v ge = 15v v ce = 1250v i c = 220a i c = 110a
ixbk55n300 IXBX55N300 ixys reserves the right to change limits, test conditions, and dimensions. ixys ref: b_55n300 (8t) 11-03-11-c ixbk55n300 IXBX55N300 fig. 19. forward-bias safe operating area @ t c = 25oc 0.01 0.1 1 10 100 1000 1 10 100 1,000 10,000 v ds - volts i d - amperes t j = 150oc t c = 25oc single pulse 100s 1ms v ce(sat) limit 25s 10ms 100ms dc fig. 20. forward-bias safe operating area @ t c = 75oc 0.01 0.1 1 10 100 1000 1 10 100 1,000 10,000 v ds - volts i d - amperes t j = 150oc t c = 75oc single pulse 100s 1ms v ce(sat) limit 25s 10ms 100ms dc
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